The PE4283 SPDT High Power RF Switch is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
The document describes the PE4283, an SPDT High Power RF Switch manufactured on Peregrine's UltraCMOS process. It operates from DC through 4000 MHz using a +3 volt power supply and features single-pin or complementary CMOS control inputs.
Key specifications include low insertion loss (0.65 dB at 1000 MHz), high isolation, and an input 1 dB compression point of +32 dBm. The device is available in a 6-lead SC-70 package.
| Operation Frequency | DC - 4000 MHz |
|---|---|
| Insertion Loss @ 1000 MHz | 0.65 dB (Typ) |
| Isolation RFC-RF1/RF2 @ 1000 MHz | 33.5 dB (Typ) |
| Input 1 dB Compression Point | +32 dBm @ 1000 MHz |
| Package Type | 6-lead SC-70 |
The device supports single-pin or complementary CMOS logic control inputs.
The switch operates using a +3 volt power supply.