This document describes the features and characteristics of the DTA114E series PNP digital transistors produced by ROHM, including built-in bias resistors, no need for external input resistors, elimination of parasitic effects, and easy circuit design. The product is suitable for applications such as switching circuits, inverter circuits, interface circuits, and driver circuits.
The DTA114EE is a PNP digital transistor featuring built‑in 10 kΩ bias resistors, allowing inverter circuits without external input resistors. It offers thin‑film isolation, eliminates parasitic effects, and is RoHS compliant.
The document provides absolute maximum ratings, electrical characteristics, dimension drawings for various package types, and packaging specifications. It also includes a notice on usage restrictions and safety considerations.
| Supply voltage (VEE) | -50 V |
|---|---|
| Input voltage (VIN) | -40 V to +10 V |
| Output current (IO) | 50 mA |
| Collector current (IC max) | 100 mA |
| Junction temperature (Tj max) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input resistance | 10 kΩ – 13 kΩ |
| Resistance ratio (Rout/Rin) | 0.8 – 1.2 |
| Transition frequency (fT) | 250 MHz |
The maximum supply voltage (VEE) is –50 V.
It can be stored from –55 °C up to +150 °C.
The input resistance ranges from 10 kΩ to 13 kΩ.
The transition frequency is specified as 250 MHz.