NEC uPA834TF Silicon Transistor Data Sheet

The µPA834TF is a low noise amplifier that can be used in the VHF band to UHF band. It has two different built-in transistors (Q1 and Q2) for low noise amplification.


NEC uPA834TF Silicon Transistor Data Sheet - cover page
Brand
NEC
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
69 KB
Published
10 May, 2012
Updated
30 September, 2023
MD5 checksum
C707BC06750BF0B72D639B8721526A5C

About this manual

The NEC uPA834TF is a silicon epitaxial NPN transistor offered in a 6‑pin thin‑type small mini‑mold package. It contains two distinct on‑chip transistors (Q1 and Q2) optimized for low‑noise amplification from VHF to UHF frequencies. The document provides detailed electrical characteristics, absolute maximum ratings, typical performance curves and S‑parameter measurements for both transistors.

Key sections include package drawings, ordering information, absolute maximum ratings such as collector‑to‑base voltage and power dissipation, electrical parameters like DC current gain and noise figure, and extensive S‑parameter tables for various bias conditions. Legal and safety notices conclude the sheet.

What's inside

  • Preliminary Data Sheet
  • Features
  • Package Information
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics
  • S‑Parameters
  • Ordering Information
  • Legal Disclaimer

Specifications

Collector current (Ic)65 mA
Junction temperature (Tj)150 °C
Storage temperature range-65 °C to +150 °C
DC current gain (hFE) Q170 to 150

Frequently asked questions

What temperature range can the device be stored at?

The device can be stored from –65 °C up to +150 °C.

What is the typical DC current gain (hFE) for transistor Q1?

The typical DC current gain for Q1 ranges from 70 to 150.

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