This document is a data sheet for µPA1853 P-CHANNEL MOS field effect transistor. The transistor is suitable for applications such as portable machines and features low on-state resistance and excellent switching characteristics.
The uPA1853 is a P‑channel MOSFET designed for switching applications. It can be driven directly by a 4‑V power source and offers low on‑state resistance, making it suitable for portable machine power switches.
Key ratings include a maximum drain‑to‑source voltage of –30 V, gate‑to‑source voltage range of –20 V to +5 V, continuous drain current of 2.5 A (10 A pulse), and a total power dissipation of 2.0 W. The device is packaged in a TSSOP‑8 and is rated for operation up to 150 °C channel temperature.
| Drain to Source Voltage (Vdss) | -30 V (max) |
|---|---|
| Gate to Source Voltage (Vgss) | -20 V to +5 V (max) |
| Drain Current (DC) | 2.5 A |
| Drain Current (pulse) | 10 A |
| Total Power Dissipation | 2.0 W |
The device can be driven by a 4‑V power source.