The BAS69 series low capacitance small signal Schottky diodes are designed for RF applications, with extremely low junction capacitance, suitable for the detection of an RF signal and the compensation of the voltage drift with the temperature.
The BAS69 series are low‑capacitance small‑signal Schottky diodes designed for RF applications where space saving and low parasitic inductance are critical. The devices feature a 15 V reverse voltage barrier and typical junction capacitance below 1 pF, reducing disturbance on RF signals.
The document lists absolute electrical ratings, thermal parameters, and detailed package dimensions for SOT‑323, SOD‑523, and SOT‑666 footprints. Ordering information, part number markings, and ECOPACK environmental options are also provided.
| Repetitive peak reverse voltage | 15 V |
|---|---|
| Continuous forward current | 10 mA |
| Storage temperature range | -65 °C to +150 °C |
| Maximum soldering temperature | 260 °C |
| Typical diode capacitance | <1 pF |
| Series inductance | 1.5 nH |
The BAS69 series diodes have a repetitive peak reverse voltage rating of 15 V.
The typical diode capacitance is less than 1 pF.
BAS69 diodes are offered in SOT‑323, SOD‑523, and SOT‑666 packages, with configurations such as single, series, common cathode, common anode, parallel, and opposite diodes.