This document is the specification for STP45NF06 and STB45NF06
The STP45NF06 and STB45NF06 are N‑channel MOSFETs fabricated with STMicroelectronics' Single Feature Size™ strip‑based process, offering low on‑resistance, high avalanche capability and robust manufacturing reproducibility. They are supplied in TO‑220/DPAK packages, with options for tape & reel or tube shipping.
Typical applications include high‑efficiency DC‑DC converters, solenoid and relay drivers, and other power conversion circuits. The document lists absolute maximum ratings, thermal data, avalanche characteristics, and detailed electrical parameters for design reference.
| Maximum Drain‑Source Voltage (Vds) | 60 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 38 A |
| Maximum Power Dissipation | 80 W |
| Maximum Junction Temperature (Tj) | 175 °C |
| Avalanche Current (Ia) | 38 A |
The maximum drain‑source voltage is 60 V.