The LT3014 is a high voltage, micropower low dropout linear regulator from National Semiconductor. The device is capable of supplying 20mA of output current with a dropout voltage of 350mV. Designed for use in battery-powered or high voltage systems, the low quiescent current (7µA operating and 1µA in shutdown) makes the LT3014 an ideal choice. Quiescent current is also well controlled in dropout. Other features of the LT3014 include the ability to operate with very small output capacitors. The regulators are stable with only 0.47µF on the output while most older devices require between 10µF and 100µF for stability. Small ceramic capacitors can be used without the necessary addition of ESR as is common with other regulators. Internal protec- tion circuitry includes reverse-battery protection, current limiting, thermal limiting and reverse current protection. The device is available as an adjustable device with a 1.22V reference voltage. The LT3014 regulator is available in the 5-lead ThinSOT and 8-lead DFN packages.
The LT3014 is a high‑voltage, micropower LDO regulator designed for battery‑powered and high‑voltage systems. It provides up to 20 mA of output current, features a low dropout of 350 mV, and consumes only 7 pA quiescent current (1 pA in shutdown). The device is adjustable from 1.22 V to 60 V and includes internal protection such as reverse‑battery and current limiting.
Typical applications include low‑current high‑voltage regulation for telecom, automotive, and battery‑backup circuits. The regulator is offered in 5‑lead ThinSOT and 8‑lead DFN packages, allowing flexible board‑level integration.
| Input voltage range | 3 V to 80 V |
|---|---|
| Output current | 20 mA |
| Dropout voltage | 350 mV |
| Quiescent current (operating) | 7 pA |
| Quiescent current (shutdown) | 1 pA |
| Adjustable output voltage range | 1.22 V to 60 V |
| Reverse‑battery protection | Included |
| Package options | 5‑lead ThinSOT and 8‑lead DFN |
The LT3014 draws only 7 pA of quiescent current when operating.
The dropout voltage is specified as 350 mV.
The device is offered in a 5‑lead ThinSOT package and an 8‑lead DFN package.
Yes, internal protection circuitry includes reverse‑battery protection.