The GLT41316 is a 65,536 x 16-bit high-performance CMOS dynamic random access memory from G-Link Technology Corporation. It features Fast Page mode, and has both BYTE WRITE and WORD WRITE access cycles via two WE pins. It has symmetric address and accepts 256-cycle refresh in 4ms interval. All inputs are TTL compatible. Fast Page Mode operation allows random access up to 256x16 bits, within a page, with cycle times as short as 18ns. The GLT41316 is best suited for graphics, and DSP applications requiring high performance memories.
The GLT41316 is a 65,536‑word by 16‑bit CMOS dynamic RAM designed for graphics and DSP applications. It supports fast page mode operation, byte‑write and word‑write cycles, and offers low power dissipation with a single 5 V ±10 % supply.
The device is offered in 40‑pin 400‑mil SOJ and 40/44‑lead TSOP (Type II) packages. Detailed electrical, timing, and AC characteristics are provided, including access times, cycle times, and refresh capabilities.
| Memory organization | 65,536 words by 16 bits |
|---|---|
| Maximum RAS access time (trac) | 30 ns |
| Maximum column address access time (taa) | 15 ns |
| Minimum fast page mode cycle time (tec) | 18 ns |
| Minimum read/write cycle time (trc) | 65 ns |
| Power supply | 5.0 V ±10 % |
It operates from a single 5 V supply with a tolerance of ±10 %.
The device is rated for operation from –55 °C to +150 °C.
The memory accepts 256 refresh cycles in a 4 ms interval.