The LT1158 is a half-bridge N-channel power MOSFET driver that drives the gate of the top MOSFET above V+. It operates at supply voltages from 5V to 30V, with 150ns transition times driving 3000pF. It has a peak driver current of over 500mA, adaptive non-overlap gate drives, continuous current limit protection, automatic shutdown and retry capability, a built-in charge pump for DC operation, built-in gate voltage protection, and is compatible with current-sensing MOSFETs. It has TTL/CMOS input levels and a fault output indication.
The LT1158 is a half‑bridge N‑channel power MOSFET driver that operates from 5 V to 30 V supply voltages. It provides adaptive non‑overlap gate drives, continuous current limit protection, and an internal charge pump for high‑current inductive loads. Features include over‑500 mA peak driver current, 150 ns transition times, and built‑in gate voltage protection.
The document includes absolute maximum ratings, electrical characteristics, pin descriptions, functional diagrams, typical performance curves, application information, and package dimensions for the 16‑lead plastic DIP version. It also offers guidance on MOSFET selection, paralleling, and example circuits for motor control and lamp driving.
| Supply Voltage (Pins 2,10) | 5 V to 30 V |
|---|---|
| Continuous Output Current (Pins 1,9,15) | 100 mA |
| Peak Driver Current | over 500 mA |
| Gate Rise/Fall Transition Time | 150 ns |
| Package | 16‑Lead Plastic DIP |
The LT1158 operates from 5 V up to 30 V supply voltage.
It can deliver a peak driver current of over 500 mA.
Each output pin can continuously source up to 100 mA.
The device is offered in a 16‑lead plastic DIP package.