Elite Semiconductor M52S128168A Synchronous DRAM Datasheet

ESMT M52S128168A is a 2.5V power supply LVTTL compatible four-channel synchronous DRAM, supporting 143MHz, 133MHz, 100MHz multiple frequencies


Elite Semiconductor M52S128168A Synchronous DRAM Datasheet - cover page
Brand
ESMT
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
47
File format
PDF
File size
1.2 MB
Published
07 May, 2012
Updated
30 September, 2023
MD5 checksum
FD773EFC054CC0182410CE266F6D0E77

About this manual

The M52S128168A is a 2M × 16‑bit mobile SDRAM organized as four banks, designed for high‑bandwidth, high‑performance applications. It operates from a 2.5 V supply, is LVTTL compatible, and supports a range of burst lengths, latencies, and special functions such as PASR and TCSR.

Key features include 2.5 V power supply, LVTTL I/O, four‑bank operation, programmable CAS latency (2‑3), burst lengths (1, 2, 4, 8, full page), auto/self‑refresh, 64 ms refresh period, and multiple package options (54‑ball TSOP II and FBGA). The device’s absolute maximum ratings, DC and AC characteristics, and timing parameters are detailed for design integration.

What's inside

  • Features
  • Ordering Information
  • General Description
  • Pin Assignment
  • Functional Block Diagram
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • AC Operating Test Conditions
  • Simplified Truth Table
  • Packing Dimensions

Specifications

Supply Voltage2.3 V – 2.7 V (typical 2.5 V)
CAS Latency2 or 3 clock cycles
Burst Length1, 2, 4, 8, full page
Refresh Period64 ms (4K cycles)

Frequently asked questions

What supply voltage range does the M52S128168A support?

The device operates with a supply voltage between 2.3 V and 2.7 V, with 2.5 V typical.

What are the supported burst lengths?

Supported burst lengths are 1, 2, 4, 8, and full page.

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