This document introduces the features and characteristics of the ESMT M52D32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM product.
The M52D32321A is a 33,554,432‑bit synchronous high‑data‑rate DRAM organized as 2 × 524,288 words by 32 bits, fabricated with high‑performance CMOS technology. It supports a 1.8 V LVCMOS supply, dual‑bank operation, programmable CAS latency (1‑3), burst length (1,2,4,8,full page) and burst type (sequential, interleave), as well as special functions such as PASR, TCSR, driver‑strength control, DQM masking, and auto/self‑refresh with a 64 ms (4K‑cycle) refresh period.
The device is supplied in a 90‑ball VFBGA package with detailed pin‑out for address, data, clock, control and power pins. Electrical specifications include a supply voltage range of 1.7‑1.9 V, maximum operating frequencies of 100 MHz (‑10 BG) or 133 MHz (‑7.5 BG), and defined AC timing parameters for various CAS latency settings. Absolute maximum ratings, DC operating conditions, and mode‑register programming tables are provided for design reference.
| Memory organization | 2 × 524,288 words × 32 bits (33 Mbit) |
|---|---|
| Supply voltage (VDD, VDDQ) | 1.7 V – 1.9 V |
| Package type | 90‑ball VFBGA |
| Refresh period | 64 ms (4K cycles) |
| CAS latency options | 1, 2, 3 |
The device operates from 1.7 V to 1.9 V for both VDD and VDDQ pins.
The DRAM features dual‑bank operation.
The refresh period is 64 ms, corresponding to a 4K‑cycle refresh interval.