MIE-544A4 is a infrared emitting diode from Unity Opto Technology Co., Ltd. It uses GaAs chip and has high radiant power and high radiant intensity. It is suitable for DC and high pulse current operation. It has a standard T-1 3/4 (φ5mm) package with a radiant angle of 40° and a peak wavelength of λP =940 nm. It has good spectral matching to si-photodetector.
The MIE-544A4 is a GaAs infrared emitting diode packaged in a standard T‑1 3/4 (6.5 mm) water‑clear plastic case. It offers high radiant power with a 40° viewing angle and a peak wavelength of 940 nm, suitable for DC and high‑pulse current operation.
The datasheet lists absolute maximum ratings such as 100 mW power dissipation, 1 A peak forward current, and a reverse voltage of 5 V. Optical‑electrical characteristics include a radiant intensity of 1.0‑2.0 mW/sr at 20 mA, forward voltage of 1.30‑1.5 V, and a spectral bandwidth of 50 nm.
| Power Dissipation | 100 mW |
|---|---|
| Peak Forward Current | 1 A |
| Continuous Forward Current | 50 mA |
| Reverse Voltage | 5 V |
| Operating Temperature Range | -55 °C to +100 °C |
| Reverse Current (5 V) | 100 pA |
The diode can dissipate up to 100 mW.
The peak forward current is 1 A and the continuous forward current is 50 mA.
The device operates from –55 °C to +100 °C.