This document describes the HZ-L series silicon epitaxial planar zener diode for low noise applications. It has a diode noise level approximately 1/3-1/10 lower than the HZ series, making it ideal for stabilized power supplies and other applications. It features low leakage, low zener impedance, and a maximum power dissipation of 400mW. The zener voltage ranges from 5.2V to 38V, providing flexibility for various applications.
The HZ-L Series silicon Zener diodes are designed for low‑noise applications such as stabilized power supplies. They offer a diode noise level roughly one‑third to one‑tenth of the older HZ series, low leakage, low Zener impedance, and a maximum power dissipation of 400 mW. The series covers a wide voltage spectrum from 5.2 V to 38 V, making it flexible for many designs.
The document lists absolute maximum ratings (400 mW power dissipation, 175 °C junction temperature), detailed electrical characteristics for each voltage grade, ordering information (DO‑35 package, orange body), and mechanical dimensions. Figures illustrate Zener voltage versus current, temperature coefficient, and power dissipation versus ambient temperature.
| Power dissipation | 400 mW |
|---|---|
| Junction temperature (Tj) | 175 °C |
| Storage temperature (Tstg) | -55 to +175 °C |
| Zener voltage range | 5.2 V to 38 V |
| Package type | DO‑35 |
| Body color | Orange |
The maximum power dissipation is 400 mW.
The junction temperature rating is 175 °C.
The series covers Zener voltages from 5.2 V up to 38 V.