This datasheet provides information on 2SD0965 (2SD965), including absolute maximum ratings, electrical characteristics, etc.
The 2SD0965 is a low‑frequency power amplification silicon NPN epitaxial planar transistor offered by Panasonic. It features a low collector‑emitter saturation voltage and high efficiency, making it suitable for applications such as stroboscopes and general electronic equipment.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and recommended operating conditions. It also includes export control notices and usage precautions for special applications, ensuring designers understand the limits and legal requirements when integrating the device.
| Collector‑Emitter Voltage (VCEO) Max | 20 V |
|---|---|
| Collector Current (IC) Max | 45 A |
| Power Dissipation (Pc) Max | 750 mW |
| Maximum Junction Temperature (Tj) Max | 150 °C |
The maximum collector‑emitter voltage is 20 V.
The device can handle up to 45 A of collector current.