Microchip 24AA04/24LC04B Serial EEPROM Datasheet

This document describes the features and characteristics of the 24AA04/24LC04B devices from Microchip Technology Inc. The device is a 4 Kbit Electrically Erasable PROM, designed for low-voltage operation down to 1.8V, with standby and active currents of only 1 μA and 1 mA, respectively. It has two blocks of 256 x 8-bit memory and uses a 2-wire serial interface. The device supports page write capability for up to 16 bytes of data. It is available in various package options and temperature ranges.


Microchip 24AA04/24LC04B Serial EEPROM Datasheet - cover page
Brand
MICROCHIP
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
26
File format
PDF
File size
426 KB
Published
11 April, 2012
Updated
29 September, 2023
MD5 checksum
8409032C9B845C85B472D18B286D32F2

About this manual

The 24AA04 and 24LC04B are 4‑Kbit serial EEPROM devices that use a 2‑wire I²C‑compatible interface. They operate from a single supply voltage as low as 1.8 V, consume low active (≈1 mA) and standby (≈1 µA) currents, and offer up to 1,000,000 write/erase cycles with data retention exceeding 200 years.

The devices are offered in multiple packages (PDIP, SOIC, TSSOP, DFN, MSOP, and SOT‑23) and support clock frequencies of 100 kHz (24AA04) or 400 kHz (24LC04B). Electrical characteristics include a typical high‑level input voltage of 0.7 VCC, low‑level input of 0.3 VCC, and low‑level output of 0.40 V. Write protection is provided via the WP pin, and ESD protection exceeds 4 kV.

What's inside

  • Device Selection Table
  • Features
  • Package Types
  • Electrical Characteristics
  • DC Characteristics
  • AC Characteristics
  • Functional Description
  • Write Operation
  • Acknowledge Polling
  • Write Protection

Specifications

Supply voltage (24AA04)1.8‑5.5 V
Supply voltage (24LC04B)2.5‑5.5 V
Operating temperature (Industrial)-40 °C to +85 °C
Operating temperature (Automotive)-40 °C to +125 °C
Active current≈1 mA (typical)
Write/erase endurance1,000,000 cycles
Data retention> 200 years
ESD protection> 4,000 V
Package optionsPDIP, SOIC, TSSOP, DFN, MSOP, SOT‑23
Clock frequency100 kHz (24AA04) / 400 kHz (24LC04B)
Write cycle time5 ms
High‑level input voltage (VIH)0.7 VCC
Low‑level input voltage (VIL)0.3 VCC
Low‑level output voltage (VOL)0.40 V

Frequently asked questions

How many write/erase cycles can the device endure?

The device is rated for up to 1,000,000 erase/write cycles.

Which package types are available for the 24AA04/24LC04B?

Available packages include 8‑lead PDIP, SOIC, TSSOP, DFN, MSOP, and a 5‑lead SOT‑23.

How is write protection implemented on the device?

Write protection is enabled by tying the WP pin to VCC, which protects the entire memory array.

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