SSM6K203FE is a high-speed switch launched by Toshiba. It has the characteristics of low-voltage drive, low on-resistance, and is suitable for power management switches.
The SSM6K203FE is a silicon N‑channel MOSFET designed for high‑speed switching and power‑management applications. It features low on‑resistance and can be driven with a 1.5 V gate voltage.
Key specifications include a maximum drain‑source voltage of 20 V, a gate‑source rating of 10 V, on‑resistance values ranging from 153 mΩ to 61 mΩ depending on drain voltage, and an operating temperature range of –55 °C to 150 °C. The document also outlines measurement conditions, dynamic input characteristics, and handling precautions for reliable use. This manual is written in Japanese.
| Drain‑Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | 10 V |
| On‑Resistance (R_ON) at V_DS=15 V | 153 mΩ (max) |
| On‑Resistance (R_ON) at V_DS=40 V | 61 mΩ (max) |
| Operating Temperature Range | -55 °C to 150 °C |
The maximum drain‑source voltage is 20 V.
It is rated for operation from –55 °C up to 150 °C.
The on‑resistance is up to 153 mΩ at V_DS = 15 V.