This document describes the features and characteristics of Toshiba Silicon P-Channel MOS Field Effect Transistor (U-MOS V), including high-speed switching and power management switch. The product has low on-resistance and operates at 1.5V.
This document describes the Toshiba SSM3J129TU silicon P‑channel MOSFET, highlighting its high‑speed switching capability and low on‑resistance. It includes package information, absolute maximum ratings, and recommended handling precautions for reliable operation.
The datasheet lists detailed electrical parameters such as drain‑source breakdown voltage, gate‑source breakdown voltage, on‑resistance at various gate biases, gate charge, and temperature operating range. It also provides switching characteristic curves and notes on static‑sensitive handling, as well as legal and safety notices for end users. This manual is written in Japanese.