RF Micro Devices Manuals - Page 2

RF Micro Devices manuals, page 2

• RF MICRO.DEVICES RF3166 handbook

  The RF3166 is a high-power, high-efficiency power ampli- fier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mm module with 50Ω input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cel- lular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands.

• RF MICRO.DEVICES RF3164 handbook

  The RF3164 3V 1900MHz Linear Power Amplifier Module is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3164 has a digital control line for low power applications to lower quiescent current. The RF3164 is assembled in at 16-pin, 3mmx3mm, QFN package.

• RF MICRO.DEVICES RF3163 handbook

  The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3163 has a digital control line for low power applications to lower quiescent current. The RF3163 is assembled in a 16-pin, 3mmx3mm, QFN package.

• RF MICRO.DEVICES RF3163 datasheet

  The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld sys- tems.

• RF MICRO.DEVICES RF3160 handbook

  The RF3160 is a high-power, high-efficiency power amplifier module from RF Micro Devices. It is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.

• RF MICRO.DEVICES RF3146 handbook

  The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control from RF Micro Devices. The module features 50Ω input and output terminals and is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands.

• RF MICRO.DEVICES RF3140 handbook

  RF3140 is a high-power, high-efficiency power amplifier module with integrated power control for use in 3V quad-band GSM handsets. It incorporates a power control function and has 50Ω input and output terminals, making it possible to drive the module directly from the DAC output. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands. The on-board power control function provides over 50dB of control range with an analog voltage input; and, power does not ramp down when the DAC output is turned off.

• RF MICRO.DEVICES RF3133 handbook

  The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control.

• RF MICRO.DEVICES RF3120 handbook

  The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero-junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread- spectrum systems, and other applications in the 1750MHz to 1780MHz band.

• RF MICRO.DEVICES RF3118 handbook

  The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3118 has a digital control line for low power application to reduce the current drain. The module is an ultra-small 6mmx6mm land grid array with backside ground.

• RF MICRO.DEVICES RF3117 handbook

  The RF3117 is a 3V CDMA/AMPS cellular phone linear amplifier module that operates at 900MHz and has high power, high efficiency, and good linearity.

• RF MICRO.DEVICES RF3110 handbook

  The RF3110 is a triple-band GSM/DCS/PCS power amplifier module with integrated power control. The integrated power control function eliminates the need for directional couplers, detector diodes, power control ASICs and other power control circuitry, allowing the module to be driven directly from the DAC output. The device is designed for use as the final RF amplifier in GSM/DCS and PCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands. On-board power control provides over 35dB of control range with an analog voltage input; and, power down with a logic “low” for standby operation.

• RF MICRO.DEVICES RF3108 handbook

  The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM/DCS and PCS hand held-digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1910MHz bands. It has 50Ω input and output terminals, supports power control and standby operation.

• RF MICRO.DEVICES RF3105 handbook

  The RF3105 is a high-power, high-efficiency linear amplifier module from RF Micro Devices. It is targeted at 3V handheld systems and is used as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band.

• RF MICRO.DEVICES RF3100-3K handbook

  The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3100-3K has a digital control line for low power application to reduce the current drain. The module is an ultra-small 6mmx6mm land grid array with backside ground.