NXP manuals, page 3
NXP PMEG2020EPK barrier rectifier
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1608D-2 (SOD1608) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NXP TYN16X-600RT Thyristor
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
NXP TYN20B-600T Thyristor
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
NXP PSMN2R4-30MLD MOSFET
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP
NXP PSMN1R4-30YLD MOSFET
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP
NXP PMGD290UCEA MOSFET
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NXP TYN20B-800T Thyristor
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
NXP PSMN020-100YS MOSFET
Standard level N-channel MOSFET in LFPAK package qualified to 175
NXP PMEG6002ELD barrier rectifier
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NXP UM10732 LPC User
The LPC11U6x/Ex are an ARM Cortex-M0+ based, low-cost 32-bit MCU family operating at CPU frequencies of up to 50 MHz. The LPC11U6x/Ex support up to 256 kB of flash memory, a 4 kB EEPROM, and 36 kB of SRAM. The ARM Cortex-M0+ is an easy-to-use, energy-efficient core using a two-stage pipeline and fast single-cycle I/O access. The peripheral complement of the LPC11U6x/Ex includes a DMA controller, a CRC engine, one full-speed USB device controller with XTAL-less low-speed mode (LPC11U6x onl
NXP UM10698 demo board User
The PCF85063x are a family of CMOS Real-Time Clocks (RTC) and calendar optimized for low power consumption. Different features sets are available. The OM11059A is the ideal evaluation/demo board to use in the design phase of any project, just power and I2C-bus must be hooked up. A separate demoboard and a user manual are available for the SPI-bus RTC
NXP TYN16X-800RT Thyristor
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150
NXP UM10782 LPC User
Assumed an LCD with a certain resolution, a defined LCD drive mode (commonly called multiplex rate) and a defined LCD bias configuration (commonly called bias system), the display contrast depends on the VLCD voltage, also called operating voltage of the display.
NXP PMV250EPEA MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NXP TYN20X-800T Thyristor
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150