NXP Manuals

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level N-channel MOSFET in TO-220 package qualified to 175

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP

The NXP Semiconductors SA56004X is an SMBus compatible, 11-bit remote/local digital temperature sensor with overtemperature alarms. The remote channel of the SA56004X monitors a diode junction, such as a substrate PNP of a microprocessor or a diode connected transistor such as the 2N3904 (NPN) or 2N3906 (PNP). With factory trimming, remote sensor accuracy of 1 C is achieved.

Logic level N-channel MOSFET in D2PAK package qualified to 175

This software installation guide shows you how to correctly load communications firmware on the Fm+ Demo Board OM13320 and the GUI software that runs under Win7 64-bit operating system. Please ignore any previous versions of software or firmware which may mention FM+DevelopmentBoard V03_00.bin, size 19kb,orFmDevelopmentBoardOM13260SoftwareInstall.zip, size 118MB. Also, there is no need to install the correct USB driver.

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

New standards and proprietary approaches are enabling the next generation of Powerover- Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.