NXP audio amplifier Manuals

The SA58672 is a mono, filter-free class-D audio amplifier which is available in a 9 bump WLCSP (Wafer Level Chip-Size Package) and 10-terminal HVSON packages. The SA58672 features shutdown control. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and very small WLCSP package makes it an ideal choice for both cellular handsets and PDAs.

The SA58635 is a stereo, class-G headphone driver with I2C-bus volume control. The I2C-bus control allows maximum flexibility with digital volume control, independent channel enable and mute control. The output of the SA58635 is referenced around true ground zero. It is designed to operate at the low supply current of 1.5 mA making it battery friendly. A unique power management technique provides class-G power efficiency by using a buck converter to step down the battery supply from a typical l

The SA58631 is a one channel audio amplifier in an HVSON8 package. It provides poweroutput of 3 W with an 8 W load at 9 V supply. The internal circuit is comprised of a BTL(Bridge Tied Load) amplifier with a complementary PNP-NPN output stage and standby/mute logic. The SA58631 is housed in an 8-pin HVSON package which has an exposed die attach paddle enabling reduced thermal resistance and increased power dissipation.

The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670A features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology.Fast start-up time and small package makes it an ideal choice for both cellular handsets and

The SA58670 is a stereo, filter-free class-D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670 features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package makes it an ideal choice for both cellular handsets and