Alpha Manuals - Page 3

Alpha manuals, page 3

• alpha 300 VOLT 80°C LOCAL AREA NETWORK IEEE-488 (GPIB) INTERFACE BUS CABLES

  This document introduces a product called MOLDED ASSEMBLY, which is a local area network IEEE-488 interface bus cable. The product consists of various cables with different specifications and has multiple features and characteristics, such as an operating temperature range of -20°C to 80°C, a voltage rating of 300 volts, and high reliability.

• ALPHA OMEGA AO4828 DATA SHEET

  This is a Hardware Maintenance Manual for Service Level A For Micro Tower Models Machine Type 2169

• ALPHA OMEGA AO4916 AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode handbook

  The AO4916 is a dual N-channel enhancement mode MOSFET from ON Semiconductor with a maximum channel voltage of 30V and a maximum drain current of 8.5A. The device uses advanced trench technology to provide excellent R DS(ON) and low gate charge, and is suitable for use in DC-DC converters.

• ALPHA OMEGA AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor handbook

  AO4918 is a dual N-channel enhancement mode field effect transistor from AOS. It features a low RDS(ON) and a low gate charge. The transistor can be used in DC-DC converters with a Schottky diode packaged in parallel with the synchronous MOSFET to further increase efficiency.

• ALPHA OMEGA AO4914 handbook

  AO4914 is a dual N-channel enhancement mode field effect transistor with Schottky diode packaged together, used in DC-DC converters.

• ALPHA OMEGA AO4832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor handbook

• ALPHA OMEGA AO4824 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor handbook

  AO4824 is a N-channel field effect transistor with a maximum channel voltage of 30V and a maximum continuous current of 8.5A. It has a low RDS(ON) and low gate charge, making it ideal for use in DC-DC converters.

• ALPHA OMEGA AO4815 Dual P-Channel Enhancement Mode Field Effect Transistorhandbook

• ALPHA OMEGA AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor handbook

  AO4806 is a dual N-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. It features excellent RDS(ON) and low gate charge. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. The maximum VDS of AO4806 is 20V and the maximum VGS is 12V.

• ALPHA OMEGA AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor handbook

  AO4805 is a dual P-channel enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. It has excellent RDS(ON), ultra-low low gate charge and a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

• ALPHA OMEGA AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor handbook

• ALPHA OMEGA AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode handbook

  This datasheet provides the specifications of AO4900A, including maximum current, maximum voltage, maximum power dissipation, and maximum temperature.

• ALPHA OMEGA AO4610 Complementary Enhancement Mode Field Effect Transistor handbook

  AO4610 is a N-channel and P-channel complementary enhancement mode field effect transistor produced by Alpha & Omega Semiconductor, Ltd. Its maximum reverse voltage is 30 V, maximum continuous forward current is 3 A, and maximum continuous drain current is 8.5 A.

• ALPHA OMEGA AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode handbook

• ALPHA OMEGA AO4615 Complementary Enhancement Mode Field Effect Transistor handbook

  AO4615 is a N-channel MOSFET and P-channel MOSFET produced by ON Semiconductor. It has good RDS(ON) and low gate charge characteristics and can be used as a high side switch, as well as other applications.