Philips manuals, page 69
PHILIPS TJA1020 handbook
This document describes the features and characteristics of the TJA1020 LIN transceiver, including the maximum baud rate, low electromagnetic emission, and high electromagnetic immunity. The transceiver is designed for in-vehicle sub-networks and supports various low power management and protection features.
PHILIPS TJA1010 handbook
TJA1010 is an octal low side driver for relays in automotive applications. It features eight independent low side drivers, small outline/medium power package, serial input control, overvoltage clamping, short-circuit protection, undervoltage shutdown, standby mode for minimum current consumption, etc.
PHILIPS BZV55 series handbook
This document describes the features and characteristics of the BZV55 series voltage regulator diodes, including total power dissipation, tolerance series, working voltage range, and non-repetitive peak reverse power dissipation.
PHILIPS BZV49 series handbook
The BZV49 series is a medium-power voltage regulator diode from Philips Semiconductors. It is packaged in a SOT89 plastic SMD and has a working voltage range of 2.4 to 75 V. The rated power is 1 W and the non-repetitive peak reverse power dissipation is 40 W.
PHILIPS BZV37 Bidirectional voltage regulator diode handbook
This datasheet introduces the features and characteristics of PHILIPS Semiconductors' product BZV37. BZV37 is a low-power bidirectional voltage regulator diode with an operating voltage of 6.5V and a non-repetitive peak reverse power of 40W. This diode can be used for voltage stabilizers and transient protection elements.
PHILIPS BZV10 to BZV14 Voltage reference diodes handbook
PHILIPS BF998WR N-channel dual-gate MOS-FET handbook
BF998WR is a N-channel dual-gate MOS-FET produced by Philips Semiconductors with high forward transfer admittance, short channel characteristics and high forward transfer admittance to input capacitance ratio, used in VHF and UHF applications, such as television tuners and professional communication equipment.
philips BF991 N-channel dual-gate MOS-FET handbook
BF991 is a N-channel dual-gate MOS-FET produced by Philips company. Its features are overvoltage protection, and it is used in VHF television tuners and FM tuners.
philips BF992 Silicon N-channel dual gate MOS-FET handbook
BF992 is a N-channel dual gate MOS-FET produced by Philips. It is suitable for applications such as VHF television tuners and FM tuners with 12V supply voltage.
philips BF990A N-channel dual-gate MOS-FET handbook
The BF990A is an N-channel dual-gate MOS-FET with integrated back-to-back diodes to protect against excessive input voltage surges. It is suitable for RF applications such as television tuners with a 12V supply voltage and professional communication equipment.
philips BF989 N-channel dual-gate MOS-FET handbook
BF989 is a N-channel dual-gate MOS-FET produced by Philips. It has protection against excessive input voltage surges and is used in UHF television tuners and professional communication equipment.
PHILIPS BF904A; BF904AR; BF904AWR handbook
BF904A is a N-channel dual gate MOS-FET from Philips Semiconductors. It is designed for use at 5 V supply voltage and features high transfer admittance to input capacitance ratio, low noise gain controlled amplifier up to 1 GHz and superior cross-modulation performance during AGC.
PHILIPS BF901; BF901R handbook
BF901 is a silicon N-channel dual gate MOS-FET produced by Philips Semiconductors. It is suitable for UHF and VHF applications, such as television tuners and professional communications equipment, especially suited for low voltage operation.
PHILIPS BF904; BF904R handbook
BF904; BF904R is an enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package, it has high transfer admittance to input capacitance ratio and superior cross-modulation performance during AGC.
PHILIPS BF904WR handbook
BF904WR is an N-channel dual-gate MOS-FET designed for use at 5V supply voltage. It features a short channel transistor with high forward transfer admittance to input capacitance ratio, and can serve as a low noise gain controlled amplifier up to 1GHz. It also offers superior cross-modulation performance during AGC.