Samsung manuals, page 9
Samsung K4S643232E Data Sheet
This document describes a CMOS SDRAM product called K4S643232E, which has high data transfer rate, synchronous design, programmable burst length and latency, and is suitable for high bandwidth, high performance memory system applications.
Samsung 256MB 512MB 1GB Registered DIMM Data Sheet
The document provides specifications and features of DDR SDRAM 256MB, 512MB, and 1GB Registered DIMM. These modules are based on 256Mb E-die (x4, x8) technology and feature 72-bit ECC and 1,700 / 1,200mil height. The ordering information includes part numbers and specifications of modules with different capacities and organizations.
Samsung M366S2953MTS SDRAM DIMM Data Sheet
The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. It has a synchronous design that allows precise cycle control. It can be used for a variety of high bandwidth, high performance memory system applications.
Samsung S1M8831A/33 Data Sheet
The S1M8831A/33 is a dual synthesizer supporting RF and IF frequencies up to 1.2GHz RF and 520MHz IF. It uses the ∑-∆ fractional-N technology to solve the fractional spurs problem in other fractional-N synthesizers based on charge pump compensation. The device also supports accurate programming of the PCS/CDMA channel frequency in 10kHz steps.
samsung OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY handbook
OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY is a product of Samsung Electronics Company. It contains information about density, model, power, temperature, package.
Samsung 128MB 256MB SODIMM Data Sheet
M470L1624FT0-C(L)B3/A2/B0 is a 128MB DDR SDRAM SODIMM memory module from Samsung. It uses 256Mb F-die chips, supports 64-bit and 72-bit data width, and has a frequency of 133MHz and 166MHz with timing of 2.5-3-3 and 2.5-3-3.
Samsung M366S1723DTS Data Sheet
The Samsung M366S1723DTS PC133/PC100 Unbuffered DIMM is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.
SAMSUNG Electronics KS88C4616/C4632/P4632 handbook
The document introduces the features and characteristics of the KS88C4616/C4632 series of single-chip 8-bit CMOS microcontrollers launched by Samsung Electronics Co., Ltd. These microcontrollers have a fast and efficient CPU, a variety of integrated peripherals, and programmable ROM.
SAMSUNG KM416C4000C KM416C4100C CMOS DRAM handbook
KM416C4000C and KM416C4100C are two CMOS DRAM chips. They are both 4Mx16 bit Fast Page Mode DRAMs and have high speed random access capability to memory cells within the same row. Their refresh cycles (4K Ref. or 8K Ref.) and access times (-5 or -6) are optional, and they all have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. These chips are manufactured using Samsung's advanced CMOS process to realize high bandwidth, low power consumption and high reliability.
SAMSUNG K4S641633H - R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM handbook
K4S641633H is a mobile memory chip produced by Samsung. It uses synchronous design to provide precise clock control and supports a wide range of operating frequencies, programmable burst lengths and programmable latencies. It can be used for various high bandwidth and high performance memory system applications.
SAMSUNG Electronics DDR SDRAM Specification Version 1.0 handbook(1)
This document is a version history record of the DDR SDRAM DDR SDRAM specification, describing the different versions and revisions of the product.
SAMSUNG KM68B261A BiCMOS SRAM handbook
KM68B261A is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. It features fast access time, low power dissipation standby, single 5V power supply, and is designed for high-density high-speed system applications.
Samsung K6E0808C1E-C/E-L K6E0808C1E-I/E-P Data Sheet
This is a 32Kx8 bit high-performance CMOS static RAM, operating voltage is 5V, suitable for commercial and industrial temperature range.
Samsung SDRAM 16Mb H-die(x16) Data Sheet
The K4S161622H is a 16,777,216-bit synchronous high data rate dynamic random access memory organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latency
SAMSUNG K7N163601A K7N161801A 512Kx36 1Mx18 Pipelined NtRAM