Samsung manuals, page 6
SAMSUNG NEXUS 25/50 car install guide
The document provides instructions on how to use the NeXus player and XM Mini-Tuner. The NeXus player can be used in the car and at home by carrying it between installations along with the Mini-Tuner. The player allows for listening to live XM broadcasts, recorded XM broadcasts, and WMA/MP3 files.
SAMSUNG NEXUS 25/50 home/car install guide
Samsung GT-I9100 user manual
GT-I9100 user manual is a Samsung mobile phone user guide that provides information on the product's features and usage methods
samsung SL-SV600J Manual
Samsung SSH22N40/35 Data Sheet
SAMSUNG ELECTRONICS KM684000LI/LI-L handbook
samsung KM6164002 KM6164002E KM6164002I handbook
KM6164002 is a CMOS SRAM product with high performance and reliability. It is designed with low power consumption and suitable for various applications.
samsung KM416V4004C KM416V4104C handbook
KM416V4004C,KM416V4104C CMOS DRAM is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. This family offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
samsung K6F4016U4G Family handbook
This datasheet provides the specifications of K6F4016U4G series products, including operating temperature range, voltage range, speed, power consumption, package type, standby current, operating current, etc.
samsung K4M56323LE - M(E)E/N/S/C/L/R handbook
K4M56323LE is a synchronous high data rate Dynamic RAM fabricated with SAMSUNG's high performance CMOS technology. It has various features and functions, including LVCMOS compatibility, four banks operation, MRS cycle, and EMRS cycle.
samsung K4M511533E - Y(P)C/L/F handbook
The K4M511533E - Y(P)C/L/F is a synchronous high data rate dynamic random access memory released by Samsung. Its capacity is 536,870,912 bits, organized as 4 x 8,388,608 words x 16 bits, and manufactured with Samsung's high performance CMOS technology. The device adopts a synchronous design, which allows precise cycle control by using the system clock, and I/O transactions are possible on every clock cycle. The device supports a variety of operating frequencies, programmable burst lengths and programmable latencies, making it suitable for a variety of high bandwidth and high performance memory system applications.
samsung DDR SDRAM 512Mb C-die (x4 x8 x16) handbook
This is a technical specification document for 512Mb C-die DDR SDRAM 66 TSOP-II with Pb-Free (RoHS compliant)
Samsung 4GB Registered DIMM Data Sheet
This document is a DDR SDRAM 4GB Registered DIMM specification, which mainly introduces the product's features and characteristics, including product composition, working frequency, density, organization structure, component composition, height, speed, etc.
SAMSUNG SSH60N10/08 DATA SHEET
SAMSUNG ELECTRONICS OneNAND256 FLASH MEMORY Manual
This document provides specifications and features of OneNAND256 flash memory, including different models with voltage, temperature range, and packaging options.