SAMSUNG Manuals

The document describes the features of the K4S56163LF mobile SDRAM product from Dinghao. The product operates at a 2.5V power supply and is LVCMOS compatible with multiplexed address. It supports four banks operation and features CAS latency, burst length, and burst type settings. The product also provides special function support such as Partial Array Self Refresh and Temperature Compensated Self Refresh. It is suitable for high bandwidth, high performance memory system applications.

The document describes the features and characteristics of the K4S641633H-R(B)E/N/G/C/L/F model mobile SDRAM product, including 3.0V and 3.3V power supply, LVCMOS compatibility, four banks operation, MRS and EMRS cycle, etc.

The K4S641633H is a synchronous high data rate dynamic random access memory (SDRAM) from Samsung that is organized as 4 x 1,048,576 words by 16 bits. The device is fabricated with Samsung's high-performance CMOS technology and features a synchronous design that allows precise cycle control with the use of system clock. The device also supports a wide range of operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for a variety of high-bandwidth and high-performance memory system applications. The K4S641633H is available in commercial temperature (-25°C to 70°C) and extended temperature (-25°C to 85°C) versions. The device is packaged in a 54-ball FBGA with 0.8mm ball pitch and is available in both leaded (-RXXX) and lead-free (-BXXX) versions.

K4S64163LH-R(B)E/N/G/C/L/F is a mobile memory produced by Samsung. It uses high performance CMOS technology. It has 2.5V power supply, 4 banks operation, MRS cycle and EMRS cycle.

This document describes the features and characteristics of the K4S643232C CMOS SDRAM product, including its storage capacity, operating voltage, operating frequency range, programmable latency, etc.

K5L5628JT(B)M is a 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM launched by Samsung

K5L5628JT(B)M is a 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM produced by Samsung Electronics. The operating voltage is 1.7V to 1.95V and the operating temperature is -30°C ~ 85°C.

K5P2880YCM is a Multi ChipPackage Memory integrating 128Mbit Nand Flash and 8Mbit full CMOS SRAM produced by Samsung. It features single 3.0V power supply and supports 528-byte page program, 16K-byte block erase with 50ns reading speed.

This document introduces the multi-chip package memory product of K5P2880YCM - T085 model from Dinghao. The product combines 128Mbit (16Mx8) Nand Flash Memory and 8Mbit (1Mx8/512Kx16) Full CMOS SRAM. The flash memory has fast programming and erasing performance, while the SRAM has high capacity and low power consumption.

The K5T6432YT(B)M is a Multi Chip Package Memory that combines 64Mbit Four Bank Flash and 32Mbit UtRAM.

This is a Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM datasheet, which provides detailed information about the product's features and characteristics.

K4S640432H/K4S640832H/K4S641632H is a 64Mb H-die CMOS SDRAM chip produced by Samsung Electronics.

This document describes the specifications of Samsung Electronics' SDRAM 64Mb H-die, including different models with various interfaces and packages, as well as its high-performance CMOS technology and synchronous design features.

This document is a technical specification of K4S640832K Synchronous DRAM Rev. 1.1 February 2006, which contains various parameters information of the product.

K4S640832K is a 64Mb synchronous dynamic random access memory (SDRAM) produced by Samsung. The chip is packaged in a K-die and supports x1, x4, x8, and x16 clock speeds.