SAMSUNG Manuals

The document describes the features and characteristics of CMOS SDRAM K4S280432D, including its storage capacity, structure, operating frequency, and power supply.

This document is about 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL. It describes the features and characteristics of the product in detail.

This document introduces three SDRAM products, namely K4S280432E, K4S280832E, and K4S281632E. They are synchronous high data rate Dynamic RAMs fabricated with Samsung's high performance CMOS technology. These products feature precise cycle control and programmable burst length and latencies, making them suitable for a variety of high bandwidth, high performance memory systems.

This is a user manual for Samsung SCH-i929, which introduces the features and characteristics of the device.

128Mb F-die SDRAM Specification

This document is a technical specification for K4S280432F/K4S280832F/K4S281632F, which introduces the features and characteristics of the product, including storage capacity, interface, package, etc.

This document is a preview version of SAMSUNG 128Mb F-die SDRAM Specification, which provides detailed information on the features and characteristics of the product

The K4S280432M CMOS SDRAM is 128Mbit SDRAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology.

The K4S280432M is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy.

K4S280832A is a 128Mbit SDRAM from Samsung, organized as 4 x 4,194,304 words by 8 bits. It is manufactured using SAMSUNG's high performance CMOS technology. This device supports multiple operating frequencies, programmable burst length and programmable latency, and can be used in a variety of high bandwidth, high performance memory system applications.

K4S280832A is a 128Mbit Synchronous High Data Rate Dynamic Random Access Memory (SDRAM) organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications.

K4S280832B is a CMOS SDRAM produced by Samsung Electronics. This datasheet introduces the pin definition, function description, working principle and other information of this product.