SAMSUNG Manuals

K4S511633C-YL/N/P is a 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM, powered by 3.0V, LVCMOS compatible with multiplexed address, supports four-bank operation, MRS cycle with address key programming.

The K4S511633F is a high-performance CMOS dynamic random access memory produced by Samsung. It uses a synchronous design that allows precise timing control and supports a variety of high-bandwidth, high-performance memory system applications. This device has multiple operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for use in a variety of applications.

K4S511633F-Y(P)C/L/F is a 536,870,912 bit synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. It has range of operating frequencies, programmable burst length and programmable latencies, which make it suitable for a variety of high bandwidth, high performance memory system applications.

K4S51153LF is a mobile SDRAM with voltage options of 2.5V/2.5V or 2.5V/1.8V. It is compatible with LVCMOS and multiplexed address. The product has four banks and supports MRS and EMRS cycles with address key programs. It also has special function support including Partial Array Self Refresh and Temperature Compensated Self Refresh. Other features include masking with DQM, auto refresh, and a 64ms refresh period. The product operates in commercial temperature range (-25°C to 70°C) and comes in a 2Chips DDP 54Balls FBGA package.

The K4S51163PF is a high-performance dynamic random-access memory device manufactured by Samsung. It features a synchronous design that allows precise cycle control with the use of the system clock, and I/O transactions are possible on every clock cycle. The device's range of operating frequencies, programmable burst lengths, and programmable latencies make it suitable for a variety of high-bandwidth and high-performance memory system applications.

K4S51163PF-Y(P)F is a synchronous high data rate dynamic memory produced by Samsung. The organization is 4 x 8,388,608 words by 16 bits, with programmable burst lengths and programmable latencies, suitable for various high bandwidth and high performance memory system applications.

This document introduces the features and characteristics of K4S513233F, including power supply voltage, interface compatibility, operating frequency, operating temperature, etc.

K4S513233F - M(E)C/L/F is a mobile storage device produced by Samsung. It supports 3.0V and 3.3V power supply, LVCMOS compatible with multiplexed address, supports four banks operation, supports MRS cycle and address key programs.

This document is the detailed information of K4S51323LF. It introduces the features and characteristics of the product in detail.

The K4S561633C-R(B)L/N/P is a synchronous dynamic random access memory (SDRAM) manufactured by Samsung. It has a storage capacity of 4M×16 bits×4 banks, a working voltage of 3.0V or 3.3V, and a working temperature range of -25°C to 85°C. The device has four bank operations, MRS cycle, CAS latency, burst length, burst type, self-refresh, and a 64ms refresh period.

K4S561633C-R(B)L/N/P is a 4M x 16Bit x 4 Banks Synchronous DRAM launched by Samsung. It adopts 54CSP package and supports 3.0V/3.0V and 3.3V/3.3V two power supply voltages. The chip has four banks operation, MRS cycle, address key program, delay cycle, burst length and burst type functions, and supports auto refresh.

The K4S561633F is a 268,435,456-bit synchronous high data rate Dynamic Random Access Memory organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

K4S56163PF is a low-power, high-performance synchronous dynamic random access memory (SDRAM) produced by Samsung. It uses 4 x 4,196,304 bytes x 16 bit high-performance CMOS technology and can work in the commercial temperature range of -25°C~70°C and the extended temperature range of -25°C~85°C.

The K4S56163PF is a 268,435,456-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 4,196,304 words by 16 bits, fabricated with Samsung's high-performance CMOS technology. Precise cycle control is allowed with the use of the system clock and I/O transactions are possible on every clock cycle due to the synchronous design. The same device can be used in a variety of high-bandwidth and high-performance memory system applications due to the range of operating frequencies, programmable burst lengths, and programmable latencies.

This document describes the features and characteristics of the K4S56163LF Mobile-SDRAM, including a 2.5V power supply, LVCMOS compatible multiplexed address, four banks operation, MRS cycle, EMRS cycle, and other functions.