ST Manuals

2N2905AHR is a high-reliability PNP bipolar transistor with linear gain characteristics. It is ESCC qualified and designed for aerospace Hi-Rel applications.

The 2N3700HR is a silicon planar epitaxial NPN transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-004 specification.

The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications.

2N3019HR is a high-reliability NPN bipolar transistor with linear gain characteristics and ESCC qualification. It is specifically designed for aerospace applications. It has a BVCEO of 80V and a maximum IC of 1A.

2N3810HR is a dual matched PNP transistor released by ST. This transistor has high reliability, linear gain characteristics, ESCC certification, etc., and is suitable for aerospace and other high reliability applications.

The document describes the features of the 2N5153HR high-reliability PNP bipolar transistor, including linear gain characteristics, ESCC qualification, European preferred part list (EPPL), and radiation level.

The 2N5154HR is a silicon planar epitaxial NPN transistor in TO-39, TO-257 and SMD.5 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-010 specification.

This document provides preliminary information on a new product that is currently in development or undergoing evaluation. Details are subject to change. This is a 1 GHz low noise operational amplifier with a bandwidth of 1 GHz, a slew rate of 1800 V/μs, an input noise of 1.3 nV/√ Hz, distortion of -78 dBc, and a 100 Ω load optimized output stage.

This document provides preliminary information on a new product currently in development or undergoing evaluation. The product features include ultra-low power consumption and high-speed operational amplifier.

The RHF350 is a high-speed low-noise amplifier from STMicroelectronics with a bandwidth of 550 MHz, a static current of 4.1 mA, a slope of 940 V/µs, an input noise of 1.5 nV/√ Hz, a distortion of -66 dBc, a minimum output swing of 2.8 Vpp, and a 5 V power supply.

This document describes a 2.5A fast recovery rectifier for aerospace applications. It features a surface mount hermetic package, high thermal conductivity materials, very small conduction losses, negligible switching losses, extremely fast switching, and low forward voltage drop. The 1N5806U is suitable for switching mode power supplies and high frequency DC to DC converters such as low voltage high frequency inverter, free wheeling or polarity protection.

This document describes a fast recovery rectifier for aerospace applications, which features high thermal conductivity materials, very small conduction losses, negligible switching losses, extremely fast switching, and low forward voltage drop.

2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications.

2N5401HR is a Hi-Rel PNP bipolar transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5202-014 specification.