ST Manuals

STPS6045HR is a 2x30A-45V Schottky rectifier from ST company. It features low voltage drop, low switching losses, low capacitance, high reverse avalanche surge capability, high temperature tolerance, etc. It is suitable for medium voltage applications and high frequency circuits.

STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet, this product has features of fast switching, 100% avalanche tested, hermetic package, 70 krad TID, SEE radiation hardened, satellite, high reliability

This document describes the features and characteristics of the Rad-Hard P-channel 100 V, 34 A Power MOSFET developed by STMicroelectronics.

The ST1843 and ST1845 are rad-tolerant current mode PWM controllers providing an industry standard solution for the implementation of provides the off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count. Its radiation hardness and hermetic packaging makes it an ideal choice for aerospace and other harsh environments.

This document describes the STMicroelectronics STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET, which features fast switching, 100% avalanche tested, hermetic package, 70 krad TID, and SEE radiation hardened.

The 2ST3360 is a fast dual complementary device (NPN and PNP) housed in a single LCC-6 hermetic Hi-Rel package, specifically designed for aerospace Hi- Rel applications. Its radiation hardness allows key parameters such as gain and leakage current to stay at best-in-class post irradiation levels. ST proprietary technology also results in a high degree of electrical performance for both transistors in the pair. The high switching performance of each make this device particularly suitable for power MOSFET driver applications.

This document describes the features and characteristics of the M24C16, M24C08, M24C04, M24C02, and M24C01 serial EEPROM chips that support the I²C bus. These chips have a two-wire I²C serial interface, support a 400kHz protocol, operate at a single supply voltage of 2.5V to 5.5V or 1.8V to 5.5V, and have features such as write control input, byte and page write (up to 16 bytes), random and sequential read modes, self-timed programming cycle, automatic address incrementing, enhanced ESD/latch-up protection, over 1 million write cycles, and over 40-year data retention.

STGY50NB60HD is an N-channel IGBT with features such as high input impedance, low on-voltage drop, low gate charge, high current capability, and very high frequency operation.

STGY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH™ IGBT is a high performance IGBT product launched by STMicroelectronics. It is based on the latest high voltage technology and has outstanding performance, such as high current capability, high frequency operation capability and low loss capability. It is suitable for high frequency inverters, SMPS and PFC applications.

STGW50NB60M is a high voltage N-channel IGBT with outstanding performance, including high input impedance (voltage driven), low on-voltage drop (VCESAT), low gate charge, and high current capability. It is suitable for applications with frequency <10kHz.

STGW50NB60H is a high voltage IGBT with high input impedance, low conduction losses and low switching losses. It is suitable for high frequency motor control, welding equipment and other applications.

This document introduces the STGW39NC60VD product from STMicroelectronics, which is an N-channel 40A-600V-TO-247 very fast switching PowerMESH™ IGBT. It has a low CRES / CIES ratio, suitable for high frequency operation, and a very soft ultra fast recovery anti-parallel diode. It is used in high frequency inverters, UPS, motor drivers, and induction heating applications.

This document provides preliminary information on a new product currently in development or undergoing evaluation. Details are subject to change. The product is an N-channel 40A-600V-TO-247 very fast switching PowerMESH™ IGBT with features including low CRES / CIES ratio (no cross conduction susceptibility), high frequency operation, and a very soft ultra-fast recovery anti-parallel diode.