ST Manuals

This is an application note about boost circuit optimization parameters, which introduces the optimization parameters of boost circuit, including the value of input capacitor Ci, the current ripple in the boost inductor Lb, the parasitic capacitances of the boost inductor and power semiconductors, the operating frequency and also the frequency modulation technique.

This is an application note that details how to use the L4981A/B controller to build a 1500W 440V power factor correction preregulator. The application note covers the circuit design, component selection, and layout.

Describes the design of a high power factor switching preregulator

This application note introduces the low-cost UC3842 current-mode controller. UC3842 can achieve high performance and low cost.

L296 and L4960 high power switching regulators can be used to realize multiple output power supplies. This note describes several practical circuits of this type.

This paper introduces the working principle and design method of PFC circuit in detail, and analyzes and discusses the input filtering problem of PFC circuit.

This document introduces the development of high-efficiency circuits using switched mode techniques, which offer space saving and cost reduction, particularly in the heatsink and output LC filter. A new technology called MULTIPOWER-BCD has been developed for these applications, allowing the integration of isolated power DMOS elements, bipolar transistors, and CMOS logic on the same chip. This technology is especially suitable for switch mode applications due to its high efficiency, fast switching speed, and no secondary breakdown of the power DMOS element. With MULTIPOWER-BCD, the L497X family has been implemented, which is a new series of fully integrated switching regulators suitable for DC-DC converters operating in Buck configuration. The family consists of five devices with different output current values (2A, 3.5A, 5A, 7A, 10A). The devices rated at 2A and 3.5A are assembled in Power Dip (16+2+2) package, while the others are assembled in the Multiwatt15 package. Each device integrates a DMOS output power stage, a control section, limiting current, and supervisor functions such as reset and power fail signal for microprocessor applications. The output voltage can be adjusted starting from the internal reference voltage.

This application note introduces L497XA series of high current switching regulator ICs, which exploit Multipower-BCD technology to achieve very high output currents with low power dissipation

The USBLC6-4SC6 is a monolithic Application Specific Discrete dedicated to ESD protection of high speed interfaces, such as USB2.0, Ethernet links and Video lines. Its very low line capacitance secures a high level of signal integrity without compromising in protecting sensitive chips against the most stringent characterized ESD strikes.

USBLC6-2 is a very low capacitance ESD protection device designed for protection of high speed interfaces such as USB2.0, Ethernet links and Video lines. Its very low line capacitance secures a high level of signal integrity without compromising in protection sensitive chips against the most stringent characterized ESD strikes.

USBDFxxW5 is a monolithic device with recommended line termination and ESD protection for USB downstream ports. It meets USB 1.1 standard and provides best EMI and ESD performance in a 50% smaller SOT323-5L package.

USB6Bx is a transient overvoltage protector designed to protect sensitive equipment, such as Universal Serial Bus ports, RS-423 interfaces, RS-485 interfaces, ISDN equipment, T1/E1 line cards, and HDSL/ADSL interfaces. The product features a full diode bridge with integrated clamping protection, a breakdown voltage of 6V, peak pulse power dissipation of 500W, and very low capacitance compatible with high data or signal rates.

The DB-960-90W is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM/GPRS/EDGE base station applications. It has excellent thermal stability, operates in the frequency range of 925-960 MHz, with a minimum output power of 90 W and a gain of 13 dB. The amplifier is sized at 80 mm x 50 mm x 10 mm.

This document introduces the DB-960-70W product, which is a N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. The product features excellent thermal stability, common source configuration, a minimum output power of 70W and a gain of 13dB over the 925-960 MHz range, and a 10:1 load mismatch capability.