ST Manuals

This application note presents a method for the calculation of the MOSFET threshold voltage thermal coefficient (TVTC). TVTC is one of the main reasons for thermal runaway in linear operation of MOSFETs. The lower the TVTC, the higher the safe operating conditions of the MOSFET in linear operation.

AN2623 is an application note from ST, which introduces a design method for a 160W off-line forward converter based on L5991.

this note describes the MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter

This application note introduces a power factor corrector using MDmeshTM II and SiC diode. The qualitative and quantitative improvements in terms of switching performances and converter efficiency are analyzed by comparing the dynamic characteristics of traditional components and the new generation of super-junction MOSFET and SiC diodes.

This article introduces an innovative verilog model for predicting the DC, small signal, and large signal behavior of LDMOS. The model is simple and provides a good approximation of the DC, small signal S-parameter, and large signal behavior. It can serve as a starting point for designers in developing new applications.

This application note demonstrates the performance of the PM6680 dual step-down controller by implementing a two output point of load converter in a small printed circuit board footprint.

This document describes a 15-W flyback switched mode power supply (SMPS) application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and L6565 quasi-resonant pulse-width modulation (PWM) controller. The application is a universal, cost-effective flyback converter used in metering applications, with an excellent wide-voltage input range from 125 to 1250 VDC, achieved using the ESBT as the main switch and a quasi-resonant PWM driver.

The SMP100LC-xxx series is a low capacitance transient surge arrestor designed for the protection of high debit rate communication equipment. Its low capacitance avoids any distortion of the signal and is compatible with digital line cards (xDSL, T1/E1, ISDN.).

This application note introduces the STGW35HF60WD 35 A, 600 V ultra fast PT IGBT and explains how to parallel this device in high power applications.

This application note provides guidelines for mounting various types of STAC® packages in amplifiers or application boards (PCB) by means of bolting or by soldering. Specific attention is paid to the STAC244B and STAC265B boltdown styles and the STAC244F and STAC265F flangeless styles, which are used to encapsulate numerous VDMOS and LDMOS technology products.

This application note presents the simulation and experimental test results on a single-phase synchronous buck converter, highlighting the power MOSFET gate driving voltage impact on converter power management and switching behavior.

This document is AN3400 application note, which introduces the role of BJT complementary pair in self-oscillating resonant driving system in CFL lighting application

This document describes the application of an electronic ballast using STD3N62K3 power MOSFET and STD845DN40 BJT devices. The electronic ballast features active power factor correction (PFC), optimized THD harmonic distortion, and electric efficiency.

One of the bigger challenges of the 21st century is to deal with the growing need for power and, at the same time, the necessity of product compactness. The new MDmesh™ V series from STMicroelectronics, based on the super junction concept, meets these targets by offering an extremely low RDS(on) value in a given package, unobtainable in standard HV MOSFETs. In addition to the dramatic reduction of RDS(on), super junction MOSFETs are extremely fast in transients and this may lead to some issues when a better performing technology replaces an older version on the same board with the same driving network. The two main components in the ST super junction MOSFET family (MDmesh™ II and MDmesh™ V) are analyzed and compared in terms of energy losses, voltage, and current rates. It is shown how the external driving network impacts on their performances. Furthermore, a separate section is dedicated to the layout parasitic effects and their impact on MOSFET behavior. It is clear in the end that layout can be crucial, especially when managing very fast transients, and it must be carefully planned in order to help the MOSFET exploit its best potential.