ST Manuals

HD ELECTRONIC VIEWFINDER HDVF-C35W is an electronic viewfinder produced by Sony Corporation. It has features such as diopter adjustment, screen adjustment, cleaning the display screen, and using the menu.

This document introduces the characteristics of IGBTs in resonant converters, and how to select IGBTs

This paper introduces the most important DC-DC converter topologies, including non-isolated buck, boost, buck-boost topologies, and isolated buck, boost, buck-boost topologies.

This document introduces the application of IGBT in automotive ignition system, and introduces the characteristics of IGBT and the advantages of using IGBT in automotive ignition system.

This application note describes a highly efficient 100kHz converter that can charge a Ni-Cd battery in 30 minutes. Battery charging is monitored by a low cost microcontroller (ST6210) that provides battery voltage identification, temperature monitoring and charge control.

This document discusses the differences between LDMOS and bipolar technology, and compares their parameters and performances. LDMOS is a type of field effect transistor (FET) with advantages over bipolar junction transistors (BJTs) including thermal stability, frequency stability, higher gain, higher ruggedness, lower noise, lower feedback capacitance, simpler bias circuitry, constant input impedance, better IMD performance, lower thermal resistance, and better AGC capability.

This application note documents the feasibility of a low cost 900 MHz cellular device as a commercial FM driver. The device uses the STMicroelectronics product SD57045 LDMOS RF transistor. LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency, linearity, and biasing simpleness that lower the overall system cost and make them attractive for high volume businesses demanding low cost RF power transistor solutions.

This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the RF MOSFET device technology and the challenges that exist to improve their RF performance and reliability.

This article introduces the characteristics of LDMOS technology and the relationship between LDMOS devices and RF performance. By understanding the parameters and characteristics of LDMOS devices, design engineers can better utilize these devices and effectively monitor the semiconductor manufacturing process.

This application note describes a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

This document describes the ruggedness improvement of RF DMOS devices, as well as the impedance mismatch issue between the output and load of RF power transistors. A theoretical model simulating the failure mode mechanism is proposed, and relevant corrective actions are undertaken.

LDMOS is a high-performance, low-power, high-density, chipless capacitor RF power amplifier

This application note introduces the latest addition to STMicroelectronics’ RF Power MOSFET family, the SD2933. The SD2933 is a single-ended, 50 V, 300 W, gold (Au) metallized, N-channel, vertical Power MOSFET, intended for use up to 150 MHz, with exceptionally high gain, and enhanced thermal packaging which makes it ideal for various applications including plasma generation, excitation and FM broadcast applications.

PowerSO-10RF is a new type of RF plastic package introduced by STMicroelectronics. It features excellent thermal performance, high power capability, high power density and suitability for all reflow soldering methods.