ST Manuals

MDmesh™ is a revolutionary technology and a “conceptual” breakthrough in the high voltage power MOSFET area. It is named after the combination of a new vertical drain structure with STMicroelectronics’ well established Mesh Overlay™ layout.

This document provides mounting recommendations for ceramic packages used in the assembly of DMOS radio frequency transistors suitable for applications such as ISM and FM broadcasting.

This document describes the application of ESBT STC03DE170HV in a 3-phase auxiliary power supply. It discusses the theory and evolution of ESBTs, as well as the characteristics and requirements of this application.

Presents a new high voltage MOSFET structure which leads to static as well as dynamic performances far ahead conventional Power MOSFET devices. The impact of the particular features of the device is analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. Results obtained from the analysis of the electrical and thermal behavior of the component in the specific are discussed.

This application notes aims to outline the characteristics of a new power device that joins the peculiarities of an STMicroelectronics fast-switching PowerMESH™ IGBT with some novel protection features. A driver circuit is integrated in the power device to implement over-current protection and soft thermal shutdown. The current limitation also ensures a highly short-circuit rated device. Moreover the low threshold voltage and input current make it possible to drive the device directly from the output pin of a microprocessor. The static and dynamic behavior of the device will be illustrated and an application will be suggested.

This document introduces the structure and working principle of IGBTs, as well as their main static and dynamic characteristics. Furthermore, the behavior in operation is analyzed and discussed in more detail to provide a complete overview of the main parameters, features, and static and dynamic behaviors of this power component.

This paper introduces a new design method for low voltage power MOSFETs suitable for high current low voltage converter applications. It uses a new strip-based structure and presents interesting characteristics due to the advanced design rules typical of VLSI processes and strong reduction of the on-state resistance.

This paper presents an innovative technique for designing and manufacturing power electronic modules using high performance cost-effective IGBTs assembled in plastic package. This technique allows optimizing both the power switching devices and the converter, in terms of power handling, reliability and cost. This design is well adapted to mass production required by automotive applications.

This article introduces the topologies implemented in Emergency Lighting Applications and the use of STMicroelectronics' power bipolar transistors. STSA851 is a power bipolar transistor with high gain performance and low saturation voltage. It is suitable for the drive circuit of emergency lamps.

This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor STSA1805 and the diode 1N5821 in order to design and realize a CCFL application.

This application note introduces a new chip-size packaging technology that enables power integrated circuits to be surface mount devices (SMDs), thus significantly reducing assembly costs and the size of power amplifier modules

This document presents the results of a 3-Phase auxiliary power supply designed with the UC3845 PWM driver and an ESBT, the new STC03DE170, as main switch. This work is supplemented by the release of a 45W dual output SMPS demo board, widely used as auxiliary power supply in 3-phase motor drive applications. Moreover, the ESBT base driving circuit and some guidelines for the optimization of the power dissipation are given. The influence of parasitic capacitance on ESBTs is also described in detail. Furthermore, the slope compensation has been added in order to remove the oscillation during max input voltage and min load. Accordingly, the discussion in theory is presented. Finally, the realization methods of the output short circuit's protection function are provided.

This document is the datasheet of SMP100MC TRISIL™. It introduces the features and characteristics of the product. The product is a protection device for communication equipment. It has bidirectional crowbar protection, voltage range from 120V to 270V, low VBO / VR ratio, micro capacitance from 20pF to 30pF @ 50V, low leakage current IR = 2µA max, holding current IH = 150 mA min, repetitive peak pulse current IPP = 100 A (10/1000µs). It is mainly used for any sensitive equipment requiring protection against lightning strikes and power crossing. These devices are dedicated to central office protection as they comply with the most stressfull standards. Their Micro Capacitance make them suitable for ADSL2+ and low end VDSL.

The SMP100LC-xxx series is a very low capacitance transient surge arrestor designed for the protection of high debit rate communication equipment. It features low capacitance, low leakage current, and bidirectional surge protection.

This technical article explains important parameters of modern power MOSFET devices, including power dissipation and its linear derating factor, silicon limited drain current, and pulsed drain current. It explains what these parameters are and how they can be calculated, serving as a useful tool for customers to understand and facilitate reading of a power MOSFET datasheet.