ON Manuals

This document describes the MAC15S series of silicon bidirectional thyristors, designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. The features include a sensitive gate that allows triggering by microcontrollers and other logic circuits, high immunity to dv/dt with a minimum of 25 V/μs at 110°C, high commutating di/dt with a minimum of 8.0 A/ms at 110°C, specified minimum and maximum values of IGT, VGT, and IH for ease of design, an on-state current rating of 15 Amperes RMS at 70°C, high surge current capability of 120 Amperes, blocking voltage up to 800 Volts, rugged and economical TO220AB package, and uniform gate trigger currents in three quadrants, Q1, Q2, and Q3.

This document introduces the features of the MAC16HC/D silicon bidirectional thyristors. The product features include: high commutating di/dt and high dv/dt immunity, three quadrant uniform gate trigger currents, 800 volt blocking voltage, 16 amperes RMS on-state current rating at 80°C, 150 amperes high surge current capability, TO-220AB standard package, etc.

MBR3060/D is a Schottky diode produced by Semiconductor Components Industries, LLC with extremely low Vf, low power loss/high efficiency, highly stable oxide passivated junction and low stored charge, majority carrier conduction.

MAC224A/D Silicon Bidirectional Thyristors are designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies.

This datasheet provides the specifications of MAC228A/D series silicon bidirectional thyristors, including maximum repetitive off-state voltage, peak non-repetitive surge current, and average gate power.

This document describes the features of a 30V, 4.0A, N-channel power MOSFET and 1.0A Schottky barrier diode. The product is packaged in a leadless SMD package, with lower thermal resistance and low Schottky forward voltage drop.

NTMD2C02R2/D is a low voltage, high speed switching MOSFET device with ultra low RDS(on) and true logic level performance.

This document describes the NTMD3P03R2 dual P-channel power MOSFET. The product features high efficiency, low RDS(on), and a small package size, making it suitable for applications such as DC-DC converters, low voltage motor control, and portable battery-powered devices.

The NTMD4102PR2 is a P-channel MOSFET from ON Semiconductor that features low RDS(on) performance and is suitable for use in game systems, notebook and desktop computers, and printers

This document is the specification sheet of NTMD6N02R2/D power MOSFET, which mainly introduces the product features and characteristics, including ultra low RDS(on), higher efficiency, logic level gate drive, miniature dual SO-8 surface mount package, high speed, soft recovery diode, avalanche energy specified, SO-8 mounting information.

NTMD6N03R2 is a 6A power MOSFET product released by Semiconductor Components Industries, LLC in January 2005. The product features ultra-low on-resistance and is suitable for low-voltage, high-frequency switching circuits. Applications include Dc-Dc converters, computers, printers, mobile phones, etc.

BRD8050/D is a comprehensive power conversion solution for mezzanine cards in routers, switches and base stations. This solution employs highly integrated devices, reducing part count. It also features robust hot swap protection, including an innovative MOSFET temperature sensing shutdown function and state-of-the-art DC-DC conversion technology.

NTMFS4833N is a power MOSFET from Semiconductor Components Industries with an operating voltage of 30V and a maximum current of 191A. It is packaged in a SO-8 FL.