Patented free-floating silicon technology
The document provides a comprehensive technical overview of the ABB 5STP45N2800 Control Thyristor. It highlights key features such as patented free-floating silicon technology, low on-state and switching losses, and optimum power handling capability designed for traction, energy, and industrial applications.
Detailed technical data is presented across maximum rated values and characteristic parameters. These include electrical ratings like blocking voltage (2800 V), average on-state current (5080 A), and surge current capabilities. The datasheet also covers mechanical data regarding mounting forces and dimensions, as well as thermal resistance values for various cooling configurations. This manual is written in Chinese.
| Average on-state current (IT(AV)M) | 5080 A |
|---|---|
| RMS on-state current (IT(RMS)) | 7970 A |
| On-state voltage (VT) | 1.07 V |
| Operating junction temperature range (Tvj) | -40 to 125 °C |
| Thermal resistance junction-to-case (double-side cooled) | 5.7 K/kW |
It is designed for traction, energy, and industrial applications.
It utilizes patented free-floating silicon technology.