5STP 26N6500 is a control thyristor produced by ABB. This thyristor has a patented floating silicon technology, low on-state and switching losses, is designed for traction, energy and industrial applications, has an optimal power handling capability, and has an interdigitated amplifying gate.
This document is a technical datasheet for the ABB 5STP26N6500 Control Thyristor. It describes a high-power semiconductor device designed for traction, energy, and industrial applications, featuring patented free-floating silicon technology.
The datasheet provides comprehensive electrical characteristics including maximum surge voltages of 6500V, RMS on-state currents up to 4410A, and detailed switching parameters such as reverse recovery charge. It also includes mechanical data regarding mounting forces, housing dimensions, and thermal resistance values for various cooling configurations.
| Max surge peak forward and reverse blocking voltage | 6500 V |
|---|---|
| Average on-state current | 2810 A |
| Storage temperature range | -40 to 140 °C |
| Weight | 2.9 kg |
The maximum surge peak forward and reverse blocking voltage (Vosm) is 6500 V.
The RMS on-state current (Irems) is rated at 4410 A.