5STP34N5200 is a control thyristor produced by ABB, with patented floating silicon technology, low on-state and switching losses, designed for traction, energy and industrial applications, excellent power handling capability, complementary amplifying gate and other features
This document is a technical datasheet for the ABB 5STP34N5200 Control Thyristor. It highlights patented free-floating silicon technology designed for traction, energy, and industrial applications with low on-state and switching losses.
The datasheet provides comprehensive maximum rated values and characteristic parameters including blocking voltage (5200V), RMS current (5650A), and thermal resistance data. It also includes analytical functions for transient thermal impedance and recommended gate drive waveforms.
| Max surge peak forward and reverse blocking voltage | 5200 V |
|---|---|
| Average on-state current (Half sine wave) | 3600 A |
| Peak non-repetitive surge current (Half sine wave) | 63.0 kA |
| On-state voltage threshold | 1.03 V |
| Slope resistance | 0.16 mΩ |
| Weight | 2.9 kg |
It is designed for traction, energy and industrial applications.
The device can be stored between -40 °C and 140 °C.
The maximum rated mounting force is between 81 and 108 kN.