Patented free-floating silicon technology
This document is a technical datasheet for the ABB 5STP27H1800 Control Thyristor. It highlights patented free-floating silicon technology designed for traction, energy, and industrial applications with low on-state and switching losses.
The datasheet provides comprehensive maximum rated values and characteristic data covering blocking voltage (1800 V), current ratings up to 4710 A RMS, thermal resistance, and gate triggering parameters. It also includes analytical functions for transient thermal impedance and on-state voltage characteristics.
| Maximum repetitive peak forward blocking voltage (VDRM) | 1800 V |
|---|---|
| RMS on-state current (IT(RMS)) | 4710 A |
| Peak non-repetitive surge current (ITSM) | 50.54×10³ A |
| Operating junction temperature range (Tvj) | -40 to 125 °C |
| Critical rate of rise of commutating voltage (dv/dt crit) | 1000 V/µs |
| Gate-trigger current (IGT) at 25°C | 400 mA |
The operating junction temperature range (Tvj) is up to 125°C.
Yes, it is designed for traction, energy and industrial applications.