TOSHIBA Manuals (Industrial)

The TPC8016-H is a high performance N-channel MOS switch from Toshiba. Its features include a small footprint, high switching speed, small gate charge, low on-resistance, high forward transfer gain, and low leakage current. This switch is suitable for applications such as notebook computers and portable devices.

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This document describes the TPC8014 model of TOSHIBA Field Effect Transistor (U-MOS III), which is suitable for lithium-ion battery applications, portable equipment applications, and notebook PC applications. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, and low leakage current.

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This document provides information about the supplier of TPC8006-H. It describes the features and characteristics of the product.

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The TPC8005-H is a high-performance N-channel MOS switch manufactured by Toshiba Semiconductor. It has small footprint, high speed, low power consumption, and is suitable for portable devices, notebook computers and other applications.

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TPC8004 is a TOSHIBA field effect transistor suitable for lithium ion battery applications, portable equipment applications, and notebook PC applications. Its features include small footprint, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.

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TPC8003 is a N-channel MOSFET produced by Toshiba. It has a small footprint and low on-resistance, making it suitable for applications such as lithium-ion batteries, portable devices, and notebook PCs.

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TPC8001 is a N-channel MOSFET produced by Toshiba. It has small package, low leakage current, high switching speed and other characteristics. It is used in lithium ion batteries, portable devices and notebook computers.

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The TPC6501 is a high-performance transistor from Toshiba. Its features are high DC current gain and low saturation voltage. It is suitable for high-frequency switching applications, DC-DC converter applications and strobe applications.

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TPC6201 is a N-channel field effect transistor produced by Toshiba, mainly used in HDD motor drive, notebook PC and portable equipment

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The TPC6108 is a P-channel MOS type field effect transistor produced by Toshiba. It has small dimensions, low resistance, high transfer gain and low leakage current, and is suitable for use in notebook computers and portable devices.

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TPC6104 is a Field Effect Transistor produced by TOSHIBA. It has the characteristics of low leakage current, high forward transfer admittance, and low on resistance. It is suitable for notebook computers and portable equipment applications.

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TPC6103 is a field effect transistor produced by TOSHIBA. It has the characteristics of low leakage current, high switching frequency, and low on-resistance. It can be widely used in notebook computers, portable devices and other fields.

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This is a TOSHIBA TPC6101 field effect transistor with the main characteristics of low leakage current, high forward transfer admittance and low on resistance.

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TPC6005 is a N-channel MOS type field effect transistor produced by TOSHIBA. It features low on-resistance, high forward transfer admittance and low leakage current. It is suitable for notebook PCs and portable equipment applications.

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The TPC6003 is a N-channel MOS type field-effect transistor with low leakage current, high on-resistance, and high conductivity, which is suitable for notebook computers and portable devices.

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This document introduces the TPC6002 model of TOSHIBA field effect transistor, which is suitable for notebook PC and portable equipment applications. Its features include low drain-source ON resistance, high forward transfer admittance, and low leakage current.

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