TOSHIBA Manuals (Industrial)

TPC8210 is a N-channel MOS transistor manufactured by Toshiba. It is mainly used in lithium ion batteries, portable devices and notebook PCs. The transistor features low leakage current, high output impedance and low switching loss.

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The TPC8209 is a N-channel MOS type field-effect transistor produced by Toshiba Corporation. It has the characteristics of miniaturization, low leakage current, high on-resistance, and is suitable for applications such as lithium batteries, portable devices, and notebook computers.

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TPC8208 is a Toshiba field effect transistor suitable for lithium-ion battery applications, notebook PC applications, and portable equipment applications. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.

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TPC8207 is a N-channel MOS field effect transistor produced by Toshiba. It features a small and thin package, low resistance, high transfer gain and low leakage current, and is suitable for use in lithium-ion batteries, notebooks and portable devices.

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This document introduces the TPC8206 model of TOSHIBA field effect transistor, which is suitable for lithium-ion battery applications, notebook PC applications, and portable equipment applications. Its features include small footprint, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.

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This document introduces the features and characteristics of the TPCS8205 field effect transistor product, which is suitable for lithium-ion battery applications and portable equipment applications. It has a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.

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TPC8204 is a TOSHIBA field effect transistor suitable for lithium-ion battery applications and portable equipment applications such as notebook PCs. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, and low leakage current.

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TPC8203 is a N-channel MOS transistor from TOSHIBA with low RDS(ON) and high |Yfs|, suitable for notebook PCs and other portable devices.

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TPC8202 is a N-channel MOS type field effect transistor produced by Toshiba. It has the characteristics of 2.5V gate drive, small size, low leakage current, low on-resistance, and is suitable for lithium ion batteries, portable devices, and notebook computers.

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TPC8201 is a TOSHIBA N-channel MOSFET with low leakage current, high on-resistance and high transfer admittance. It is suitable for applications such as lithium ion batteries, portable devices and notebooks.

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Small footprint, low leakage current, high ON resistance

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TPC8111 is a MOS field effect transistor produced by TOSHIBA. It is mainly used in lithium batteries, notebook computers and other scenes. The product has the characteristics of small size, low leakage current and high transfer gain.

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TPC8110 is a P-channel MOS type (U-MOS III) field effect transistor produced by Toshiba. It is mainly used in lithium ion batteries, notebook PCs and portable equipment. The transistor has the characteristics of small size, low on-resistance, high transmission gain and low leakage current.

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This document describes the features and applications of the TPC8108 field effect transistor, including its use in notebook PCs and portable equipment. The transistor has small footprint, low drain-source ON resistance, high forward transfer admittance, and low leakage current.

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This document describes the features and characteristics of the TPC8107 field effect transistor, which is suitable for lithium-ion battery applications, notebook PC applications, and portable equipment applications. It has a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, etc.

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TPC8106-H is a high-performance, high-efficiency field-effect transistor produced by Toshiba Corporation. It is mainly used in lithium-ion batteries, notebook computers, and portable devices. The transistor has the characteristics of miniaturization, high speed switching, low gate charge, low leakage current, and low on-resistance.

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TPC8105-H is a P-channel MOS type field effect transistor produced by Toshiba. This transistor has the characteristics of small size, high speed switching, small gate charge, low leakage current, low on-resistance, high forward transfer admittance, etc., and is suitable for applications such as notebook computers and portable equipment.

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The TPC8104-H is a high-performance field effect transistor produced by Toshiba. It is mainly used in lithium-ion batteries and notebook computers. The transistor has the advantages of small size, high frequency switching, low gate charge, low on-resistance, high forward transfer admittance and low leakage current.

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The TPC8102 is a P-channel MOSFET from Toshiba. It is characterized by its small size, low power consumption, and low leakage current. It is suitable for applications such as notebook PCs and portable equipment.

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