ST Manuals (Industrial)

STGP7NB60K-STGP7NB60KFP-STGD7NB60K STGP7NB60KD-STGP7NB60KDFP-STGB7NB60KD is a N-channel 7A-600V-TO-220/FP/DPAK/D2PAK PowerMESH™ IGBT produced by STMicroelectronics, with outstanding performances such as high input impedance (voltage driven), low on-voltage drop (Vcesat), low gate charge, high current capability, off losses include tail current, frequency operation, short circuit rated, etc., and is applied to high frequency motor control, SMPS and PFC applications.

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The STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH IGBT is a high-performance power IGBT device from STMicroelectronics. It features high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation and low off-losses, making it suitable for high frequency motor controls, SMPS and PFC applications.

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This document describes the features and performance of the PowerMESH™ IGBT series products produced by STMicroelectronics. These products have high input impedance, low on-voltage drop (Vcesat), off losses including tail current, low gate charge, high current capability, and high frequency operation. They are suitable for motor controls, SMPS and PFC, and both hard switch and resonant topologies.

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STGB7NB40LZ is a high voltage insulated gate bipolar transistor (IGBT) designed by STMicroelectronics. It features low threshold voltage, low on-voltage drop, low gate charge, high current capability and high voltage clamping. The device is suitable for automotive ignition applications.

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STGB6NC60HD, STGB6NC60HD-1, STGF6NC60HD, STGP6NC60HD are a family of N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH™ IGBTs designed by STMicroelectronics. This product has the features of low voltage drop (Vcesat), low CRES / CIES ratio (no cross-conduction susceptibility), very soft ultra fast recovery antiparallel diode and high frequency operation.

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STGP6NC60HD and STGF6NC60HD are a new generation of N-channel 6A-600V TO-220/TO-220FP PowerMESH™ IGBTs with outstanding performances, including lower on-voltage drop, lower off losses, lower CRES/CIES ratio, high frequency operation and very soft ultra fast recovery anti parallel diode. They are suitable for high frequency inverters, SMPS and PFC applications.

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STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, using the latest high voltage technology based on a patented strip layout, with outstanding performances. The STGB3NB60SD is one of the IGBTs in this family, featuring high input impedance, very low on-voltage drop, high current capability, integrated freewheeling diode, and more. It is suitable for applications such as gas discharge lamps, static relays, motor control, etc.

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STGP3NB60MD - STGB3NB60MD is a N-CHANNEL 3A - 600V TO-220 / D2PAK PowerMESH™ IGBT produced by STMicroelectronics. It has high input impedance, low on-voltage drop, low off losses include tail current, low gate charge, high current capability, high frequency operation and so on.

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STGP3NB60K is a N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT from STMicroelectronics, which has high input impedance, low on-voltage drop, low gate charge, high current capability, off losses include tail current, high frequency operation and short circuit rating.

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The STGB3NB60HD is a N-channel 3A-600V TO-263 power module produced by ST company. It has high input impedance, low on-voltage drop, low gate charge, high current capability, high frequency operation, and open-circuit losses include tail current.

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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD is a high-performance IGBT produced by STMicroelectronics. This device has high input impedance, low on-voltage drop, low gate charge, high current capability, low off-loss, high frequency operation, etc. It is mainly used in motor control and SMPS and PFC circuits.

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STGB20NB41LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, low gate charge, high current capability, and high voltage clamping feature. It utilizes the latest high voltage technology based on a patented strip layout, providing outstanding performances.

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STGB20NB37LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, high current capability, and high voltage clamping feature. It is designed using the latest high voltage technology based on patented strip layout, delivering outstanding performances.

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STGB20NB32LZ is an N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT produced by ST. It uses the latest high voltage technology, has outstanding performance, and integrates an emitter-gate zener diode and a collector-gate zener diode, respectively providing ESD protection and high-precision active clamping.

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This document is the specification of STGD18N40LZ - STGB18N40LZ, which introduces the features and characteristics of the product, including rated voltage, electrical characteristics, test circuits, and package dimensions

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STMicroelectronics N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBTs with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short cir- cuit withstand capability.

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STGB12NB60KD is a 600V, 18A IGBT, packaged in TO-220 and D2PAK.

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The STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT is an advanced family of IGBTs with outstanding performances, designed by STMicroelectronics.

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STGB10NB37LZ is a N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh IGBT produced by STMicroelectronics. It uses the latest high voltage technology, and has the characteristics of low threshold voltage, low turn-on voltage drop, low gate charge, high current capability and high voltage clamping.

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STGB10NB37LZ is a N-channel bipolar transistor launched by SGS-Thomson. It has low threshold voltage, low turn-on voltage drop, high current capacity, high voltage clamping feature, etc. It is used in automotive ignition and other fields.

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