ST STGB7NB40LZ handbook

Update: 01 October, 2023

STGB7NB40LZ is a high voltage insulated gate bipolar transistor (IGBT) designed by STMicroelectronics. It features low threshold voltage, low on-voltage drop, low gate charge, high current capability and high voltage clamping. The device is suitable for automotive ignition applications.


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MD5 Checksum: ADE922417CA72EC531CBF1F76D14ABB6

Publication date: 08 August, 2012

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PDF Link: ST STGB7NB40LZ handbook PDF

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