Philips Manuals (Industrial)

BUK100-50GL is a logic level power MOSFET from Philips Semiconductors with an operating voltage of 50V, a continuous drain current of 13.5A and a total power dissipation of 40W. It is packaged in a TO220AB package.

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The product is BUK100-50DL, a logic level power MOSFET with temperature and overload protection functions, which can be used in automotive systems and other scenarios.

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BUK456-800A/B is a N-channel enhancement mode field-effect power transistor from Philips Semiconductors. It is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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PIMZ2 and PUMZ2 are Philips NPN/PNP dual transistors featuring simplified circuit design, reduced component count and reduced pick and place costs. They are suitable for general purpose switching and amplification applications.

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PUMZ1 is an NPN/PNP general purpose transistor with low current and low voltage characteristics, suitable for general purpose switching and amplification.

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PUMX1 is a NPN double transistor produced by PHILIPS company, with low current (maximum 100 mA), low voltage (maximum 40 V) and small size. It can be used in general switching and amplification circuits.

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This document describes the features and characteristics of the PUMT1 PNP general purpose double transistor, including low current, low voltage, and reduced number of components and boardspace.

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This data sheet provides detailed information about the PUMH9 product, including product features, application scenarios, external dimensions, pin definitions, etc.

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The PUMH7 is an NPN double transistor with built-in bias resistor R1 (typ. 4.7 kΩ). It has no mutual interference between the transistors and simplifies circuit design. It reduces the number of components and board space. The PUMH7 is especially suitable for space reduction in interface and driver circuits and inverter circuit configurations without use of external resistors.

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PUMH4 is an NPN resistor-equipped double transistor with built-in bias resistor R1 (typical value 10 kΩ). There is no mutual interference between the transistors, simplifying circuit design and reducing the number of components and board space. It is especially suitable for space reduction in interface and driver circuits, and can be used in inverter circuit configurations without the use of external resistors.

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This datasheet is about PEMH10 and PUMH10, which are NPN/NPN transistors with built-in bias resistors.

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This document describes the features and characteristics of the PUMH11 NPN resistor-equipped double transistor, including built-in bias resistors R1 and R2, no mutual interference between transistors, simplification of circuit design, and reduction of components and board space. This product is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without the use of external resistors.

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PEMH1 and PUMH1 are NPN/NPN transistors produced by PHILIPS, with built-in bias resistors, which can simplify circuit design, reduce component count and costs.

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The PUMF12 is a combination of Philips' PNP general purpose power transistor and NPN diode. It has 100mA collector current, 50V collector-emitter voltage, 300mW total power dissipation, and SOT363 package. It can replace two SOT323 packaged devices on the same PCB area.

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PUMF11 is a semiconductor product that integrates NPN resistor-equipped transistor and PNP general purpose transistor. It features 100mA collector current, 50V collector-emitter voltage, 300mW total power dissipation, etc. It is suitable for power management switch and regulator switch in portable devices.

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This document describes the PUMD9 NPN/PNP resistor-equipped transistors, which have built-in bias resistors and different polarities. It simplifies circuit design and reduces the number of components and board space. It is especially suitable for space reduction in portable equipment and inverter circuit configurations without the use of external resistors.

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PUMD6 is a bipolar transistor with different polarities, each with a built-in bias resistor. It simplifies circuit design and reduces the number of components and board space. It is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without the use of external resistors.

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This document describes the features and characteristics of the PUMD48 NPN/PNP resistor-equipped transistors, including built-in bias resistors, two transistors with no mutual interference, simplified circuit design, and reduced number of components and board space.

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PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ is a product of Philips Semiconductors. Products feature built-in bias resistors, simplify circuit design, reduce component count, and reduce pick and place costs. Products are used for low current peripheral driver, IC input control, and general-purpose transistor replacement in digital applications.

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This document describes the features and characteristics of the PUMD2 NPN/PNP resistor-equipped transistors, including transistors with different polarity and built-in bias resistors, simplification of circuit design, reduction of components and board space usage. It is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without the use of external resistors.

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