Numonyx Manuals

This document details the features of NAND01G-B2B and NAND02G-B2C, including high density NAND flash memories, NAND interface, power voltage, page size, block size, page read/program, copy back program mode, fast block erase, status register, electronic signature, chip enable 'don't care', serial number option, data protection, data integrity, ECOPACK® packages, development tools, etc.

M29W040B 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory is a single power supply 2.7-3.6V Flash memory with a 55ns access time and 10µs/Byte programming time, supports 8 64K bytes of storage blocks, and embedded byte programming, multi-block/chip erase algorithm, status register polling and toggle bits, erase suspend and resume modes, unlock bypass programming command, low power consumption, 100,000 times/block of program/erase cycles and 20 years of data retention.

This document describes the features and characteristics of the M25P05-A 512-Kbit serial flash memory, including flash memory capacity, programming and erasing speed, supply voltage, and serial interface.

The M25P40 is a 4 Mbit low voltage, serial Flash memory with 50 MHz SPI bus interface.

The M25P10-A is a 1Mbit serial Flash memory with features like 2.3 to 3.6V single supply voltage, 50MHz clock rate (maximum), deep power-down mode 1µA (typical), JEDEC standard two-byte signature (2011h), RES instruction, one-byte signature (10h), more than 20 years' data retention etc.

This document describes the features and characteristics of the M29W320DT and M29W320DB models of Flash memory released in March 2008, Rev 10. It includes information about the supply voltage range, access time, programming time, memory block quantity, programming/erase controller, erase suspend and resume modes, fast programming and write protect, low power consumption, program/erase cycle count, electronic signature, etc.

M29W640FT M29W640FB 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Feature summary

The features of M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory are introduced, including supply voltage, access time, programming time, storage blocks, programming/erasing controller, erase suspend and resume modes, unlock bypass program command, VPP/WP pin, temporary block unprotection mode, common flash interface, low power consumption, 100,000 programming/erase cycles per block, electronic signature and so on

M45PE10 is a 1-megabit page-erasable serial flash memory with byte-alterability and a 75 MHz SPI bus interface.

This document describes the features and characteristics of M29W160ET and M29W160EB 16 Mbit flash memory. The flash memory has features such as supply voltage range, access times, programming time, memory block quantity, programming/erase controller, unlock bypass program command, temporary block unprotection mode, common flash interface, low power consumption, programming/erase cycles, etc.

The M45PE80 is a 8Mbit low voltage, page-erasable serial flash memory with byte alterability and a 50MHz SPI bus interface from Numonyx.

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY

The M45PE40 is a 4-Mbit, page-erasable serial flash memory with byte-alterability and a 75 MHz SPI bus interface.

This file introduces M36L0T7050T2, M36L0T7050B2 two 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package features