This document provides specifications and features of the product IRL630PbF by IRF.
This document is a technical datasheet for the IRL630PbF, a third-generation HEXFET Power MOSFET manufactured by International Rectifier. The device features logic-level gate drive, repetitive avalanche rating, and dynamic dv/dt capability. It is specified with a drain-to-source voltage (Vdss) of 200V, a continuous drain current (Ip) of 9.0A at 25°C, and operates within a junction temperature range of -55 to +150°C.
The datasheet provides comprehensive electrical characteristics including on-resistance, gate charge, capacitance, and switching times under various conditions. It also includes source-drain ratings for the body diode, thermal resistance values, maximum safe operating area diagrams, and test circuit layouts for avalanche energy and switching time measurements.
| Continuous Drain Current (25°C) | 9.0 A |
|---|---|
| Continuous Drain Current (100°C) | 57 A |
| Power Dissipation (25°C) | 74 W |
| Drain-to-Source Breakdown Voltage | 200 V |
| Static Drain-to-Source On-Resistance (Typ) | 0.402 Ohm |
| Gate Threshold Voltage (Typ) | 10 V |
| Operating Junction Temperature Range | -55 to +150 °C |
The device uses a TO-220AB package, which is preferred for commercial-industrial applications at power dissipation levels up to approximately 50 watts.
Yes, the IRL630PbF is specified as Lead-Free.