The Motorola MTU18N50E datasheet provides electrical characteristics, ratings, package dimensions, and safe operating area for a 500 V, 18 A N‑channel power…
This datasheet describes the Motorola TMOS high‑voltage N‑channel power MOSFET designed for high‑speed switching in power supplies, converters and PWM motor controls. It includes maximum ratings, electrical characteristics, switching behavior, and safe operating area information.
Key specifications include a 500 V drain‑to‑source voltage, 18 A continuous drain current, typical on‑resistance of 0.31 Ω at VGS = 10 V, and a gate‑threshold voltage of about 2 V. Package dimensions and thermal limits are also provided for board‑level design.
| Drain‑to‑Source Voltage (VDSS) | 500 Vdc |
|---|---|
| On‑Resistance (RDS(on)) – typical | 0.31 Ω |
| Gate Threshold Voltage (VGS(th)) | 2.0 V |
The MOSFET is rated for a maximum drain‑to‑source voltage of 500 Vdc.
The typical on‑resistance is 0.31 Ω under those conditions.
The gate‑threshold voltage is specified as 2.0 V (typical).