Technical data sheet for the Microchip MCP87030 N‑Channel power MOSFET, including electrical specs, package details and thermal ratings.
The MCP87030 is an N‑Channel power MOSFET offered in a 5 mm × 6 mm PDFN package. It features low on‑resistance, low gate charge and fast switching, making it suitable for high‑efficiency power conversion.
The document provides absolute maximum ratings, typical electrical characteristics, pin descriptions, packaging information, and performance curves, along with revision history and ordering details.
| Drain-to-Source Breakdown Voltage (BVDSS) | 25 V (typical) |
|---|---|
| Gate‑to‑Source Threshold Voltage (VGS(TH)) | 1.1 V – 1.6 V |
| Total Gate Charge (QG) | 1.72 nC (typical) |
| Maximum Continuous Drain Current (ID) | 100 A at TA=+25 °C |
| Operating Temperature Range (TJ) | -55 °C to +150 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.2 °C/W |
The device can handle up to 100 A continuous drain current at a test temperature of +25 °C.
It is rated for junction temperatures from –55 °C up to +150 °C.
Yes, the datasheet states the device is RoHS compliant.