SSM3K105TU is a high-speed switching DC-DC converter produced by Toshiba. It is powered by 4V and has a low on-resistance, which can meet the needs of various switching power supply applications.
The Toshiba SSM3K105TU is a silicon N‑channel MOSFET designed for high‑speed switching applications. The datasheet provides detailed electrical characteristics such as drain‑source voltage, on‑resistance, and capacitance values, as well as recommended operating conditions.
Additional sections include switching‑characteristic measurement conditions, package dimensions for both FR‑4 and ceramic substrates, and extensive handling precautions to ensure reliability under various temperature and load scenarios. This manual is written in Japanese.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Maximum Drain Current (ID) | 2.1 A |
| Operating Temperature Range | -55 °C to 150 °C |
The maximum drain‑source voltage is 30 V.
The device can be stored from –55 °C to 150 °C.