This document describes ST's Spice model versions available for Power MOSFETs. It explains the features of different model versions both in terms of static and dynamic characteristics and simulation performance, in order to find the right compromise between the computation time and accuracy.
This document explains STMicroelectronics' Spice model versions for Power MOSFETs, including V1C through V4 and TN. It details thermal modeling, simulation setup, and convergence tips. The self-heating model (V3) accurately reproduces thermal response but requires more simulation effort. Users must install model files (.LIB and .OLB) and adjust simulation parameters for best results.
| Model versions | V1C, V1T, V2, V3, V4, TN |
|---|---|
| Simulation parameters | ABSTOL= 1nA, CHGTOL= 1 pC..10 pC, ITL1= 150, ITL2= 20...150, RELTOL= 0.001...0.01 |
ST provides six versions: V1C, V1T, V2, V3, V4, and TN, each with varying levels of thermal and dynamic modeling.
Use ABSTOL= 1nA, CHGTOL= 1 pC..10 pC, ITL1= 150, ITL2= 20...150, ITL4= 20...150, and RELTOL= 0.001...0.01.